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GaN High Electron Mobility Tansistor for LED lighting application
Industry type: Electronics and communication
Product model number: ES-HD3535
EPISTAR CORPORATION
GaN high electron mobility transistor (HEMT) device applied to LED lighting as a novel lighting solution is first suggested by EPISTAR in the world. This LED lighting solution is integrated with GaN HEMT, LED chip and driver on board (DOB) technology in the circuit. Compare to conventional LED driver, our solution provide 15% efficiency improve in operation and reduce 33% component quantity consume in production. Thus, one should be able to realize a high efficiency, low production cost, compact and robust LED lighting device by using our solution. The key components of LED lighting are made in the Taiwan including LED chip GaN HEMT etc. All of the lighting circuit design and assembly are also in Taiwan.
